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PHOTO TRANSISTORS TYPICAL CHARACTERISTICS (PHOTOT RANSISTORS SERIES) NOTE: 1.INPUT IRRADIANCE IS SUPPLIED BY A PULSED GALLIUM ARSENIDE TIGHT EMITTING DIODE WITH A RISE TIME OF LESS THAN 500ns. INCIDENT IRRADIATION IS ADJUSTED FOR SPECIFIED IL. PHOTO TRANSISTORS (DOUBLE CHIPS) PART NUMBER LIGHT CURRENT DARK CURRENT VCE(SAT) 1/2 TR TF PACKGE DRAWING MIN.(mA) MAX.(mA) VCE(V) EV(Lux) MAX.(nA) VCE(V) IC=0.5mA H=20mw/cm TYP.(V) TYP.(deg TYP.(nm) VCC=30V IL=800uA TYP.RL=1Kohm(us) JL-T391D 0.6 12 5 1000 100 10 0.4 60 880 5 5 F-A JL-T361T-B 0.8 15 5 1000 100 10 0.4 25 880 5 5 F-B

No.844, Sec. 1, Kong Fu Rd., Wu Chi Town, Taichung Hsien, Taiwan Tel : 886-4-26561373 Fax: 886-4-26566418 Contact Person/Title : NICO CHI/ Manager E-mail : jiannwa.led@msa.hinet.net Copyright 2000 Jiann Wa Electronics Co., Ltd. Web site designed and hosted by Taiwan Products Online